Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3

Aya Uruno; Masakazu Kobayashi

doi:10.1002/pssa.201600284

Structural and electric properties of AgGaTe₂ layers prepared using mixed source of Ag₂Te and Ga₂Te₃

Aya Uruno^*, Masakazu Kobayashi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

AgGaTe₂ layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag₂Te and Ga₂Te₃. Ag₂Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag₂Te and Ga₂Te₃ in the mixed source on the crystallinity of the AgGaTe₂ layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag₂Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe₂ layer with an abrupt interface between AgGaTe₂ and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 10¹⁶ cm⁻³. A solar cell was fabricated using the p-AgGaTe₂/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

Original language	English
Article number	1600284
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	214
Issue number	1
DOIs	https://doi.org/10.1002/pssa.201600284
Publication status	Published - 2017 Jan 1

Keywords

AgGaTe
chalcopyrites
closed space
solar cells
sublimation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201600284

Cite this

@article{c208de785c5942a4a79a086f3b1e5a3f,

title = "Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3 ",

abstract = "AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.",

keywords = "AgGaTe, chalcopyrites, closed space, solar cells, sublimation",

author = "Aya Uruno and Masakazu Kobayashi",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

month = jan,

day = "1",

doi = "10.1002/pssa.201600284",

language = "English",

volume = "214",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3

AU - Uruno, Aya

AU - Kobayashi, Masakazu

PY - 2017/1/1

Y1 - 2017/1/1

N2 - AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

AB - AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

KW - AgGaTe

KW - chalcopyrites

KW - closed space

KW - solar cells

KW - sublimation

UR - http://www.scopus.com/inward/record.url?scp=84991011114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991011114&partnerID=8YFLogxK

U2 - 10.1002/pssa.201600284

DO - 10.1002/pssa.201600284

M3 - Article

AN - SCOPUS:84991011114

SN - 1862-6300

VL - 214

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 1

M1 - 1600284

ER -