Structural and electrical properties of H-terminated diamond field-effect transistor

Michal Kubovic, Makoto Kasu*, Yoshiharu Yamauchi, Kenji Ueda, Hiroyuki Kageshima

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

A dielectric barrier separating hydrogen induced p-type channel and Al gate metal contact of diamond FET has been investigated. The separation barrier is necessary to prevent tunneling current between the H-induced channel and the gate contact. In this investigation, CV measurements, fitting of forward IV characteristics, TEM and SIMS profiles have been used to obtain a more detailed picture of this barrier layer. While the composition of this layer is not clear, TEM and SIMS measurements indicate that this layer may be connected to a diamond phase or aluminium oxide. Using material properties of these materials, thickness of the separation layer extracted from the CV measurements was between 5-10 nm and the channel sheet change density was above 1 × 1013 cm- 2. This thickness is in good agreement with the TEM observations. Frequency dependent CV measurements showed almost no frequency dependence, and no UV light dependence has been observed. Temperature dependent CV measurements showed a decrease of the dielectric constant at 100 °C. Fitting of the forward tunnelling current indicated a thickness of the barrier layer of about 5 nm with a barrier height of 2.4 eV.

Original languageEnglish
Pages (from-to)796-799
Number of pages4
JournalDiamond and Related Materials
Volume18
Issue number5-8
DOIs
Publication statusPublished - 2009 May
Externally publishedYes

Keywords

  • Diamond
  • Field-effect transistor
  • Hydrogen termination
  • Interface electronic properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • General Physics and Astronomy

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