Structural change induced in LaAlO3 by ion implantation

Masayuki Harima; Yosuke Horii; Takaaki Morimoto; Yoshimichi Ohki

doi:10.1109/ISEIM.2014.6870748

Structural change induced in LaAlO₃ by ion implantation

Masayuki Harima, Yosuke Horii, Takaaki Morimoto, Yoshimichi Ohki

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P⁺ or B⁺ ions on the structural change of single crystal LaAlO₃ were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO ₃, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO₃. However, as compared with YAlO₃ with a similar perovskite structure, LaAlO₃ is more resistant to ion implantation.

Original language	English
Title of host publication	Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
Publisher	Institute of Electrical Engineers of Japan
Pages	180-183
Number of pages	4
ISBN (Print)	9784886860866
DOIs	https://doi.org/10.1109/ISEIM.2014.6870748
Publication status	Published - 2014 Jan 1
Event	2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata, Japan Duration: 2014 Jun 1 → 2014 Jun 5

Publication series

Name	Proceedings of the International Symposium on Electrical Insulating Materials

Other

Other	2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
Country/Territory	Japan
City	Niigata
Period	14/6/1 → 14/6/5

Keywords

Impurity
Ion implantation
Photoluminescence
X-ray diffraction

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISEIM.2014.6870748

Cite this

Harima, M., Horii, Y., Morimoto, T., & Ohki, Y. (2014). Structural change induced in LaAlO₃ by ion implantation. In Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 (pp. 180-183). Article 6870748 (Proceedings of the International Symposium on Electrical Insulating Materials). Institute of Electrical Engineers of Japan. https://doi.org/10.1109/ISEIM.2014.6870748

Structural change induced in LaAlO₃ by ion implantation. / Harima, Masayuki; Horii, Yosuke; Morimoto, Takaaki et al.
Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014. Institute of Electrical Engineers of Japan, 2014. p. 180-183 6870748 (Proceedings of the International Symposium on Electrical Insulating Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Harima, M, Horii, Y, Morimoto, T & Ohki, Y 2014, Structural change induced in LaAlO₃ by ion implantation. in Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014., 6870748, Proceedings of the International Symposium on Electrical Insulating Materials, Institute of Electrical Engineers of Japan, pp. 180-183, 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014, Niigata, Japan, 14/6/1. https://doi.org/10.1109/ISEIM.2014.6870748

Harima M, Horii Y, Morimoto T, Ohki Y. Structural change induced in LaAlO₃ by ion implantation. In Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014. Institute of Electrical Engineers of Japan. 2014. p. 180-183. 6870748. (Proceedings of the International Symposium on Electrical Insulating Materials). doi: 10.1109/ISEIM.2014.6870748

@inproceedings{cbbd04a0c85345dbb137e85d5e68f8a0,

title = "Structural change induced in LaAlO3 by ion implantation",

abstract = "Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.",

keywords = "Impurity, Ion implantation, Photoluminescence, X-ray diffraction",

author = "Masayuki Harima and Yosuke Horii and Takaaki Morimoto and Yoshimichi Ohki",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/ISEIM.2014.6870748",

language = "English",

isbn = "9784886860866",

series = "Proceedings of the International Symposium on Electrical Insulating Materials",

publisher = "Institute of Electrical Engineers of Japan",

pages = "180--183",

booktitle = "Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014",

note = "2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 ; Conference date: 01-06-2014 Through 05-06-2014",

}

TY - GEN

T1 - Structural change induced in LaAlO3 by ion implantation

AU - Harima, Masayuki

AU - Horii, Yosuke

AU - Morimoto, Takaaki

AU - Ohki, Yoshimichi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

AB - Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

KW - Impurity

KW - Ion implantation

KW - Photoluminescence

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84906539745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906539745&partnerID=8YFLogxK

U2 - 10.1109/ISEIM.2014.6870748

DO - 10.1109/ISEIM.2014.6870748

M3 - Conference contribution

AN - SCOPUS:84906539745

SN - 9784886860866

T3 - Proceedings of the International Symposium on Electrical Insulating Materials

SP - 180

EP - 183

BT - Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014

PB - Institute of Electrical Engineers of Japan

T2 - 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014

Y2 - 1 June 2014 through 5 June 2014

ER -