Structural defects in amorphous silicon oxynitride and silicon nitride

H. Kato*, Y. Ohki

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

1 Citation (Scopus)


Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.

Original languageEnglish
Pages (from-to)39-49
Number of pages11
JournalDefect and Diffusion Forum
Publication statusPublished - 2003


  • Amorphous Materials
  • Band-Tail States
  • Paramagnetic Defects
  • Photoluminescence
  • Poole-Frenkel Conduction
  • Static Disorder

ASJC Scopus subject areas

  • Radiation
  • General Materials Science
  • Condensed Matter Physics


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