Structural defects in amorphous silicon oxynitride and silicon nitride

Physics & Astronomy

• oxynitrides 87%
• optoelectronic devices 72%
• silicon nitrides 71%
• amorphous silicon 67%
• electron paramagnetic resonance 66%
• photoluminescence 51%
• irradiation 46%
• hydrogen 45%
• electric fields 42%
• characterization 40%
• photons 40%
• defects 40%
• electronics 38%

Chemical Compounds

• Amorphous Silicon 99%
• Nitride 70%
• Photon 70%
• Optoelectronics 66%
• Electric Field 65%
• Photoluminescence 56%
• Hydrogen 37%
• Application 23%

Engineering & Materials Science

• Amorphous silicon 100%
• Silicon nitride 88%
• Defects 50%
• Photoluminescence 39%
• Paramagnetic resonance 33%
• Photons 28%
• Optoelectronic devices 28%
• Irradiation 25%
• Electric fields 22%
• Characterization (materials science) 21%
• Hydrogen 19%