Structural defects in Sr0.7Bi2.3Ta2O9 thin film for ferroelectric memory

Tetsuya Osaka*, Sachiko Ono, Akira Sakakibara, Ichiro Koiw

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Using transmission electron microscopy (TEM), we studied structural defects in a Sr0.7Bi2.3TA2O9 (SBT) thin film to be used for ferroelectric memory devices. We examined the effects of the substrate, crystal continuity, and dislocations in crystals as major causes of defects. For this study, we used an SBT thin film grown from an alkoxide solution. Since crystal growth was hardly influenced by the substrate, the substrate had little influence on the occurrence of defects resulted in misfit of lattice constant. Regions of partially low crystal continuity were observed in the SBT thin film. In these regions, the orientation was still uniform, but the continuity of the crystal grain was low because of the defects. In addition, variation in contrast was observed in the crystals, however, no obvious variation in chemical composition was found in this region of varying contrast. Therefore, the contrast variation is considered to be attributed to the dislocation. Such a dislocation was found to be occurred in the direction of the (2(MO) plane in many instances. The defects in the SBT film were also confirmed by the TEM observation.

Original languageEnglish
Pages (from-to)545-550
Number of pages6
JournalIEICE Transactions on Electronics
Issue number4
Publication statusPublished - 1998


  • Chemical liquid deposition
  • Ferroelectric memory
  • Srojbh.jtaio? thin film
  • Structural defects
  • Tem observation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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