Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization

Ryota Goto; Yukiko Takahashi; Nobuki Tezuka; Koichiro Inomata; Satoshi Sugimoto; Kazuhiro Hono

doi:10.2320/jinstmet.71.258

Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization

Ryota Goto^*, Yukiko Takahashi, Nobuki Tezuka, Koichiro Inomata, Satoshi Sugimoto, Kazuhiro Hono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the structural, magnetic and barrier properties for Co-ferrite thin films, which have been formed by plasma oxidization of the surface of Co₃₃Fe₆₇ (CoFe₂) underlayer deposited on MgO(001) single crystal substrates. XRD patterns and cross sectional TEM observation revealed that the Co-ferrite thin films grew epitaxially with the (001) orientations on (001)-oriented CoFe₂ underlayer. The saturation magnetization of CoFe₂ and Co-ferrite annealed at 523 K were 1.5 Wbm^-2 and 0.44 Wbm^-2, respectively. Magnetizations of these two layers were rotated simultaneously. Coercivity increased up to near 80 kAm^-1 after postannealing. To evaluate barrier properties of Co-ferrite, we have fabricated magnetic tunnel junctions (MTJs) consisting of CoFe₂/Co-ferrite/Ta on MgO(001) single crystal substrates through microfabrication technique. These MTJs exhibited the non-linear current density(J)-voltage(V) curves, revealing that Co-ferrite thin films acted as a barrier.

Original language	English
Pages (from-to)	258-262
Number of pages	5
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	71
Issue number	2
DOIs	https://doi.org/10.2320/jinstmet.71.258
Publication status	Published - 2007 Feb
Externally published	Yes

Keywords

Cobalt ferrite
Spin-filtering device
Spin-polarized current source
Spinel ferrite thin film
Spintronics

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

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title = "Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization",

abstract = "We have investigated the structural, magnetic and barrier properties for Co-ferrite thin films, which have been formed by plasma oxidization of the surface of Co33Fe67 (CoFe2) underlayer deposited on MgO(001) single crystal substrates. XRD patterns and cross sectional TEM observation revealed that the Co-ferrite thin films grew epitaxially with the (001) orientations on (001)-oriented CoFe2 underlayer. The saturation magnetization of CoFe2 and Co-ferrite annealed at 523 K were 1.5 Wbm-2 and 0.44 Wbm-2, respectively. Magnetizations of these two layers were rotated simultaneously. Coercivity increased up to near 80 kAm-1 after postannealing. To evaluate barrier properties of Co-ferrite, we have fabricated magnetic tunnel junctions (MTJs) consisting of CoFe2/Co-ferrite/Ta on MgO(001) single crystal substrates through microfabrication technique. These MTJs exhibited the non-linear current density(J)-voltage(V) curves, revealing that Co-ferrite thin films acted as a barrier.",

keywords = "Cobalt ferrite, Spin-filtering device, Spin-polarized current source, Spinel ferrite thin film, Spintronics",

author = "Ryota Goto and Yukiko Takahashi and Nobuki Tezuka and Koichiro Inomata and Satoshi Sugimoto and Kazuhiro Hono",

year = "2007",

month = feb,

doi = "10.2320/jinstmet.71.258",

language = "English",

volume = "71",

pages = "258--262",

journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",

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T1 - Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization

AU - Goto, Ryota

AU - Takahashi, Yukiko

AU - Tezuka, Nobuki

AU - Inomata, Koichiro

AU - Sugimoto, Satoshi

AU - Hono, Kazuhiro

PY - 2007/2

Y1 - 2007/2

N2 - We have investigated the structural, magnetic and barrier properties for Co-ferrite thin films, which have been formed by plasma oxidization of the surface of Co33Fe67 (CoFe2) underlayer deposited on MgO(001) single crystal substrates. XRD patterns and cross sectional TEM observation revealed that the Co-ferrite thin films grew epitaxially with the (001) orientations on (001)-oriented CoFe2 underlayer. The saturation magnetization of CoFe2 and Co-ferrite annealed at 523 K were 1.5 Wbm-2 and 0.44 Wbm-2, respectively. Magnetizations of these two layers were rotated simultaneously. Coercivity increased up to near 80 kAm-1 after postannealing. To evaluate barrier properties of Co-ferrite, we have fabricated magnetic tunnel junctions (MTJs) consisting of CoFe2/Co-ferrite/Ta on MgO(001) single crystal substrates through microfabrication technique. These MTJs exhibited the non-linear current density(J)-voltage(V) curves, revealing that Co-ferrite thin films acted as a barrier.

AB - We have investigated the structural, magnetic and barrier properties for Co-ferrite thin films, which have been formed by plasma oxidization of the surface of Co33Fe67 (CoFe2) underlayer deposited on MgO(001) single crystal substrates. XRD patterns and cross sectional TEM observation revealed that the Co-ferrite thin films grew epitaxially with the (001) orientations on (001)-oriented CoFe2 underlayer. The saturation magnetization of CoFe2 and Co-ferrite annealed at 523 K were 1.5 Wbm-2 and 0.44 Wbm-2, respectively. Magnetizations of these two layers were rotated simultaneously. Coercivity increased up to near 80 kAm-1 after postannealing. To evaluate barrier properties of Co-ferrite, we have fabricated magnetic tunnel junctions (MTJs) consisting of CoFe2/Co-ferrite/Ta on MgO(001) single crystal substrates through microfabrication technique. These MTJs exhibited the non-linear current density(J)-voltage(V) curves, revealing that Co-ferrite thin films acted as a barrier.

KW - Cobalt ferrite

KW - Spin-filtering device

KW - Spin-polarized current source

KW - Spinel ferrite thin film

KW - Spintronics

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Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization

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Keywords

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