Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization

Ryota Goto*, Yukiko Takahashi, Nobuki Tezuka, Koichiro Inomata, Satoshi Sugimoto, Kazuhiro Hono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have investigated the structural, magnetic and barrier properties for Co-ferrite thin films, which have been formed by plasma oxidization of the surface of Co33Fe67 (CoFe2) underlayer deposited on MgO(001) single crystal substrates. XRD patterns and cross sectional TEM observation revealed that the Co-ferrite thin films grew epitaxially with the (001) orientations on (001)-oriented CoFe2 underlayer. The saturation magnetization of CoFe2 and Co-ferrite annealed at 523 K were 1.5 Wbm-2 and 0.44 Wbm-2, respectively. Magnetizations of these two layers were rotated simultaneously. Coercivity increased up to near 80 kAm-1 after postannealing. To evaluate barrier properties of Co-ferrite, we have fabricated magnetic tunnel junctions (MTJs) consisting of CoFe2/Co-ferrite/Ta on MgO(001) single crystal substrates through microfabrication technique. These MTJs exhibited the non-linear current density(J)-voltage(V) curves, revealing that Co-ferrite thin films acted as a barrier.

Original languageEnglish
Pages (from-to)258-262
Number of pages5
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number2
Publication statusPublished - 2007 Feb
Externally publishedYes


  • Cobalt ferrite
  • Spin-filtering device
  • Spin-polarized current source
  • Spinel ferrite thin film
  • Spintronics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry


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