Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane

Takashi Noma; Takaharu Sugiura; Keisuke Ishii; Yoshimichi Ohki; Yoshimasa Hama

doi:10.1088/0022-3727/30/6/005

Structural stabilization induced by oxygen plasma post-exposure of SiO₂ films deposited from tetraethoxysilane

Takashi Noma^*, Takaharu Sugiura, Keisuke Ishii, Yoshimichi Ohki, Yoshimasa Hama

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Structural changes induced by post-exposure to oxygen plasma were studied for SiO₂ films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.

Original language	English
Pages (from-to)	937-943
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	30
Issue number	6
DOIs	https://doi.org/10.1088/0022-3727/30/6/005
Publication status	Published - 1997 Mar 21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/30/6/005

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@article{4a61674d08ba45d2b11a04f379403b27,

title = "Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane",

abstract = "Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.",

author = "Takashi Noma and Takaharu Sugiura and Keisuke Ishii and Yoshimichi Ohki and Yoshimasa Hama",

year = "1997",

month = mar,

day = "21",

doi = "10.1088/0022-3727/30/6/005",

language = "English",

volume = "30",

pages = "937--943",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane

AU - Noma, Takashi

AU - Sugiura, Takaharu

AU - Ishii, Keisuke

AU - Ohki, Yoshimichi

AU - Hama, Yoshimasa

PY - 1997/3/21

Y1 - 1997/3/21

N2 - Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.

AB - Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.

UR - http://www.scopus.com/inward/record.url?scp=0000114533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000114533&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/30/6/005

DO - 10.1088/0022-3727/30/6/005

M3 - Article

AN - SCOPUS:0000114533

SN - 0022-3727

VL - 30

SP - 937

EP - 943

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 6

ER -

Structural stabilization induced by oxygen plasma post-exposure of SiO₂ films deposited from tetraethoxysilane

Abstract

ASJC Scopus subject areas

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