Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure

Yuuki Sato*, Shin ichiro Gozu, Tomohiro Kita, Syoji Yamada

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

25 Citations (Scopus)


For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin-orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In0.75Ga0.25As/In0.75Al0.25As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin-orbit interaction parameter, α, we measured Shubnikov-de Haas (SdH) oscillations at 1.5 K. We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni40Fe60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼ 0.1% as well as a resistance hysteresis behavior of ∼ 12% in non-local geometry below 20 K. These results are the first step to realize an active spintronic device, such as spin-FET.

Original languageEnglish
Pages (from-to)399-402
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
Publication statusPublished - 2002 Jan
Externally publishedYes
Event14th International Conference on the - Prague, Czech Republic
Duration: 2001 Jul 302001 Aug 3


  • Narrow gap semiconductor
  • Spin-orbit interaction
  • Spin-polarized electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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