Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

K. Kawabata; M. Tanizawa; K. Ishikawa; Y. Inoue; M. Inuishi; T. Nishimura

doi:10.1109/SISPAD.2011.6035048

Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

K. Kawabata^*, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz- Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.

Original language	English
Title of host publication	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages	55-58
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2011.6035048
Publication status	Published - 2011 Nov 1
Externally published	Yes
Event	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan Duration: 2011 Sept 8 → 2011 Sept 10

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Country/Territory	Japan
City	Osaka
Period	11/9/8 → 11/9/10

Keywords

MRAM
domain wall movement
spin transfer torque

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/SISPAD.2011.6035048

Cite this

Kawabata, K., Tanizawa, M., Ishikawa, K., Inoue, Y., Inuishi, M., & Nishimura, T. (2011). Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 55-58). [6035048] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035048

Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. / Kawabata, K.; Tanizawa, M.; Ishikawa, K. et al.
2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 55-58 6035048 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawabata, K, Tanizawa, M, Ishikawa, K, Inoue, Y, Inuishi, M & Nishimura, T 2011, Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. in 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011., 6035048, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 55-58, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, Japan, 11/9/8. https://doi.org/10.1109/SISPAD.2011.6035048

Kawabata K, Tanizawa M, Ishikawa K, Inoue Y, Inuishi M, Nishimura T. Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 55-58. 6035048. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2011.6035048

Kawabata, K. ; Tanizawa, M. ; Ishikawa, K. et al. / Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. pp. 55-58 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz- Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.",

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AU - Ishikawa, K.

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AU - Inuishi, M.

AU - Nishimura, T.

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AB - We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz- Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.

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Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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