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Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime
Hisayo Sasaki Momose*, Hideki Kimijima, Shin ichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Shin ichi Nakamura, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai
*Corresponding author for this work
Research output: Contribution to journal › Conference article › peer-review
25
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(Scopus)