Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy

Sathiabama Thiru; Masaki Asakawa; Kazuki Honda; Atsushi Kawaharazuka; Atsushi Tackeuchi; Toshiki Makimoto; Yoshiji Horikoshi

doi:10.1016/j.jcrysgro.2015.02.059

Study of single crystal CuInSe₂ thin films and CuGaSe₂/CuInSe₂ single quantum well grown by molecular beam epitaxy

Sathiabama Thiru^*, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

High quality CuGaSe₂ and CuInSe₂ single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe₂ is grown on CuInSe₂ at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe₂/CuInSe₂. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe₂/CuInSe₂ single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.059
Publication status	Published - 2015 Jul 28

Keywords

A1. RHEED
A1. XRD
A3. CGS/CIS single quantum well
A3. MEE
B3. Solar cell
PL
Thin-film chalcopyrite

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2015.02.059

Cite this

@article{e967d05ec4804dcfa89dc747a7b05b27,

title = "Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy",

abstract = "High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.",

keywords = "A1. RHEED, A1. XRD, A3. CGS/CIS single quantum well, A3. MEE, B3. Solar cell, PL, Thin-film chalcopyrite",

author = "Sathiabama Thiru and Masaki Asakawa and Kazuki Honda and Atsushi Kawaharazuka and Atsushi Tackeuchi and Toshiki Makimoto and Yoshiji Horikoshi",

note = "Funding Information: This work is partly supported by Grants-in-Aid for Scientific Research B ( 23360163 ) and Young Scientists B ( 20760203 and 22760233 ) from the Japan Society for the Promotion of Science (JSPS) . The authors are most grateful to Tomotaka Satou, Kouki Toyoda and Ryuki Taniguchi of Waseda University. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.All rights reserved.",

year = "2015",

month = jul,

day = "28",

doi = "10.1016/j.jcrysgro.2015.02.059",

language = "English",

volume = "425",

pages = "203--206",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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T1 - Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy

AU - Thiru, Sathiabama

AU - Asakawa, Masaki

AU - Honda, Kazuki

AU - Kawaharazuka, Atsushi

AU - Tackeuchi, Atsushi

AU - Makimoto, Toshiki

AU - Horikoshi, Yoshiji

N1 - Funding Information: This work is partly supported by Grants-in-Aid for Scientific Research B ( 23360163 ) and Young Scientists B ( 20760203 and 22760233 ) from the Japan Society for the Promotion of Science (JSPS) . The authors are most grateful to Tomotaka Satou, Kouki Toyoda and Ryuki Taniguchi of Waseda University. Publisher Copyright: © 2015 Elsevier B.V.All rights reserved.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

AB - High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

KW - A1. RHEED

KW - A1. XRD

KW - A3. CGS/CIS single quantum well

KW - A3. MEE

KW - B3. Solar cell

KW - PL

KW - Thin-film chalcopyrite

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