Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

Hidehiro Tsubokura, Akihiro Oshima*, Tomoko G. Oyama, Yuya Takasawa, Naoyuki Fukutake, Satoshi Okubo, Taeko Yoshikawa, Toshitaka Oka, Takeshi Murakami, Yoshimasa Hama, Masakazu Washio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N7+), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne10+ and Xe54+ changed from 6.5×10-13 to 2.0×10-11μm/(ioncm-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalRadiation Physics and Chemistry
Publication statusPublished - 2013 Nov


  • Direct etching
  • Heavy ion beam
  • LET
  • Micro-fabrication
  • PTFE
  • Stopping power

ASJC Scopus subject areas

  • Radiation


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