Abstract
Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N7+), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne10+ and Xe54+ changed from 6.5×10-13 to 2.0×10-11μm/(ioncm-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.
Original language | English |
---|---|
Pages (from-to) | 37-42 |
Number of pages | 6 |
Journal | Radiation Physics and Chemistry |
Volume | 92 |
DOIs | |
Publication status | Published - 2013 Nov |
Keywords
- Direct etching
- Heavy ion beam
- LET
- Micro-fabrication
- PTFE
- Stopping power
ASJC Scopus subject areas
- Radiation