Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi*, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials X
Publication statusPublished - 2006
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States
Duration: 2006 Jan 232006 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials X
Country/TerritoryUnited States
CitySan Jose, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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