Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

G. Kido; S. Yamada; T. Makimoto

doi:10.1016/0921-4526(92)90144-H

Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

G. Kido^*, S. Yamada, T. Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

Original language	English
Pages (from-to)	433-436
Number of pages	4
Journal	Physica B: Physics of Condensed Matter
Volume	177
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(92)90144-H
Publication status	Published - 1992 Mar 2
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(92)90144-H

Cite this

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title = "Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs",

abstract = "Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.",

author = "G. Kido and S. Yamada and T. Makimoto",

year = "1992",

month = mar,

day = "2",

doi = "10.1016/0921-4526(92)90144-H",

language = "English",

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pages = "433--436",

journal = "Physica B: Physics of Condensed Matter",

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T1 - Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

AU - Kido, G.

AU - Yamada, S.

AU - Makimoto, T.

PY - 1992/3/2

Y1 - 1992/3/2

N2 - Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

AB - Longitudinal and transverse magnetoresistance experiments were carried out on GaAs with two impurity-doped planes in steady high magnetic fields up to 30 T. A large oscillation was observed in the field range higher than 10 T. The double Si-doped planes behave as a single well even for 15 nm separation of the atomic planes.

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U2 - 10.1016/0921-4526(92)90144-H

DO - 10.1016/0921-4526(92)90144-H

M3 - Article

AN - SCOPUS:0027108441

SN - 0921-4526

VL - 177

SP - 433

EP - 436

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-4

ER -

Subband structure of two-dimensional electrons at double silicon-doped atomic layers in GaAs

Abstract

ASJC Scopus subject areas

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