Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique

Hiroaki Morimoto; Katsuhiro Tsukamoto; Hirofumi Shinohara; Masahide Inuishi; Tadao Kato

doi:10.1109/T-ED.1987.22911

Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique

Hiroaki Morimoto, Katsuhiro Tsukamoto, Hirofumi Shinohara, Masahide Inuishi, Tadao Kato

Research output: Contribution to journal › Article › peer-review

Abstract

Resist patterns as small as 0.1 μm, were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the sub-half-micrometer region, n-channel Si MOSFET's with 0.3-0.8-(μm, gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.

Original language	English
Pages (from-to)	230-234
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/T-ED.1987.22911
Publication status	Published - 1987 Feb
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{e417600f667c4392a266c4019fc6a04f,

title = "Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique",

abstract = "Resist patterns as small as 0.1 μm, were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the sub-half-micrometer region, n-channel Si MOSFET's with 0.3-0.8-(μm, gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.",

author = "Hiroaki Morimoto and Katsuhiro Tsukamoto and Hirofumi Shinohara and Masahide Inuishi and Tadao Kato",

year = "1987",

month = feb,

doi = "10.1109/T-ED.1987.22911",

language = "English",

volume = "34",

pages = "230--234",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique

AU - Morimoto, Hiroaki

AU - Tsukamoto, Katsuhiro

AU - Shinohara, Hirofumi

AU - Inuishi, Masahide

AU - Kato, Tadao

PY - 1987/2

Y1 - 1987/2

N2 - Resist patterns as small as 0.1 μm, were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the sub-half-micrometer region, n-channel Si MOSFET's with 0.3-0.8-(μm, gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.

AB - Resist patterns as small as 0.1 μm, were fabricated by the irradiation of a gallium focused ion beam followed by an oxygen plasma development. The measured width of the patterns fabricated by this technique was in good agreement with the designed linewidth in the sub-half-micrometer region, n-channel Si MOSFET's with 0.3-0.8-(μm, gates were fabricated by the use of this technique. These results, accompanied by the fabricated and demonstrated performance of a ring oscillator, showed the feasibility of focused-ion-beam lithography.

UR - http://www.scopus.com/inward/record.url?scp=0023291984&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023291984&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1987.22911

DO - 10.1109/T-ED.1987.22911

M3 - Article

AN - SCOPUS:0023291984

SN - 0018-9383

VL - 34

SP - 230

EP - 234

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Submicrometer-Gate MOSFET's by the Use of Focused-Ion-Beam Exposure and a Dry Development Technique

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