Subplcosecond exciton spin relaxation in GaN

T. Kuroda*, T. Yabushita, T. Kosuge, A. Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

Original languageEnglish
Pages (from-to)3116-3118
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2004 Oct 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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