TY - GEN
T1 - Substrate Bias Effect on SOI-based Thermoelectric Power Generator
AU - Inokawa, Hiroshi
AU - Goi, Yuto
AU - Yorigami, Toshiaki
AU - Shirotori, Kyohei
AU - Satoh, Hiroaki
AU - Tomita, Motohiro
AU - Matsuki, Takeo
AU - Ikeda, Hiroya
AU - Watanabe, Takanobu
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by the CREST projects JPMJCR15Q7 and JPMJCR19Q5 of Japan Science and Technology Corporation (JST), the Cooperative Research Project of the Research Center for Biomedical Engineering with RIE, Shizuoka University, and the Cooperative Research Project Program of RIEC, Tohoku University. We are grateful to Mr. Daisuke Kawaguchi of Hamamatsu Photonics K.K. for his support in stealth dicing.
Publisher Copyright:
©2021 IEEE
PY - 2021
Y1 - 2021
N2 - Thermoelectric characteristics of phosphorus-doped silicon (Si) nanowire (NW) are evaluated in terms of the substrate bias effect. It is found that the narrower wire is more sensitive to the substrate voltage presumably due to the field crowding effect. In case of 200-nm-wide NW, application of 40 V to the substrate increases the NW conductance by a factor of 55.4, and leads to ×25.9 improvement in power generation, even though the Seebeck coefficient is reduced to 74%. The result suggests that the performance of the Si thermoelectric generator could be improved or optimized by the substrate bias control.
AB - Thermoelectric characteristics of phosphorus-doped silicon (Si) nanowire (NW) are evaluated in terms of the substrate bias effect. It is found that the narrower wire is more sensitive to the substrate voltage presumably due to the field crowding effect. In case of 200-nm-wide NW, application of 40 V to the substrate increases the NW conductance by a factor of 55.4, and leads to ×25.9 improvement in power generation, even though the Seebeck coefficient is reduced to 74%. The result suggests that the performance of the Si thermoelectric generator could be improved or optimized by the substrate bias control.
KW - Seebeck coefficient
KW - Silicon
KW - silicon-on-insulator (SOI)
KW - substrate bias effect
KW - thermoelectric power generator (TEG)
UR - http://www.scopus.com/inward/record.url?scp=85126951396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85126951396&partnerID=8YFLogxK
U2 - 10.1109/QIR54354.2021.9716172
DO - 10.1109/QIR54354.2021.9716172
M3 - Conference contribution
AN - SCOPUS:85126951396
T3 - 17th International Conference on Quality in Research, QIR 2021: International Symposium on Electrical and Computer Engineering
SP - 119
EP - 122
BT - 17th International Conference on Quality in Research, QIR 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th International Conference on Quality in Research, QIR 2021: International Symposium on Electrical and Computer Engineering
Y2 - 13 October 2021 through 15 October 2021
ER -