TY - GEN
T1 - Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling
AU - Fujisawa, T.
AU - Sato, T.
AU - Mitsuhara, M.
AU - Kakitsuka, T.
AU - Yamanaka, T.
AU - Kondo, Y.
AU - Kano, F.
PY - 2008
Y1 - 2008
N2 - Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.
AB - Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.
UR - http://www.scopus.com/inward/record.url?scp=57649219567&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57649219567&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2008.4668268
DO - 10.1109/NUSOD.2008.4668268
M3 - Conference contribution
AN - SCOPUS:57649219567
SN - 9781424423071
T3 - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
SP - 113
EP - 114
BT - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
T2 - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Y2 - 1 September 2008 through 4 September 2008
ER -