Superconducting properties of homoepitaxial CVD diamond

Y. Takano; T. Takenouchi; S. Ishii; S. Ueda; T. Okutsu; I. Sakaguchi; H. Umezawa; H. Kawarada; M. Tachiki

doi:10.1016/j.diamond.2007.01.027

Superconducting properties of homoepitaxial CVD diamond

Y. Takano^*, T. Takenouchi, S. Ishii, S. Ueda, T. Okutsu, I. Sakaguchi, H. Umezawa, H. Kawarada, M. Tachiki

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

94 Citations (Scopus)

Abstract

Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for T_C onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films T_C onset = 6.3 K and T_C zero = 3.2 K were significantly suppressed.

Original language	English
Pages (from-to)	911-914
Number of pages	4
Journal	Diamond and Related Materials
Volume	16
Issue number	4-7 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.diamond.2007.01.027
Publication status	Published - 2007 Apr

Keywords

Boron
Diamond
MIT
Superconductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2007.01.027

Cite this

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title = "Superconducting properties of homoepitaxial CVD diamond",

abstract = "Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.",

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T1 - Superconducting properties of homoepitaxial CVD diamond

AU - Takano, Y.

AU - Takenouchi, T.

AU - Ishii, S.

AU - Ueda, S.

AU - Okutsu, T.

AU - Sakaguchi, I.

AU - Umezawa, H.

AU - Kawarada, H.

AU - Tachiki, M.

PY - 2007/4

Y1 - 2007/4

N2 - Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

AB - Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for TC onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films TC onset = 6.3 K and TC zero = 3.2 K were significantly suppressed.

KW - Boron

KW - Diamond

KW - MIT

KW - Superconductivity

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DO - 10.1016/j.diamond.2007.01.027

M3 - Article

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JO - Diamond and Related Materials

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IS - 4-7 SPEC. ISS.

ER -

Superconducting properties of homoepitaxial CVD diamond

Abstract

Keywords

ASJC Scopus subject areas

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