Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

Akihiro Kawano*, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)


The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

Original languageEnglish
Article number085318
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number8
Publication statusPublished - 2010 Aug 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition'. Together they form a unique fingerprint.

Cite this