Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

T. Iwamatsu; T. Ipposhi; T. Uchida; S. Maegawa; M. Inuishi

Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

T. Iwamatsu^*, T. Ipposhi, T. Uchida, S. Maegawa, M. Inuishi

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

4 Citations (Scopus)

Abstract

The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

Original language	English
Pages	80-81
Number of pages	2
Publication status	Published - 2000 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology",

abstract = "The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.",

author = "T. Iwamatsu and T. Ipposhi and T. Uchida and S. Maegawa and M. Inuishi",

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T1 - Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

AU - Iwamatsu, T.

AU - Ipposhi, T.

AU - Uchida, T.

AU - Maegawa, S.

AU - Inuishi, M.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

AB - The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.

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ER -

Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

Abstract

ASJC Scopus subject areas

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