Surface and microstructural characterization of homoepitaxial silicon grown by pulsed laser deposition

Engineering & Materials Science

• Pulsed laser deposition 100%
• Characterization (materials science) 56%
• Silicon 50%
• Reflection high energy electron diffraction 44%
• Thin films 40%
• Substrates 30%
• Superconducting materials 28%
• Atomic force microscopy 27%
• Temperature 25%
• Single crystals 24%
• Transmission electron microscopy 22%
• Crystals 21%
• Surface roughness 17%
• Lasers 16%
• Fabrication 15%

Physics & Astronomy

• pulsed laser deposition 61%
• characterization 35%
• silicon 34%
• silicon films 23%
• thin films 22%
• high energy electrons 21%
• critical temperature 19%
• electron diffraction 18%
• surface roughness 18%
• fluence 18%
• atomic force microscopy 16%
• transmission electron microscopy 14%
• single crystals 13%
• fabrication 13%
• temperature 12%
• crystals 10%
• lasers 9%
• energy 6%

Chemical Compounds

• Pulsed Laser Deposition 85%
• Reflection High Energy Electron Diffraction 34%
• Liquid Film 31%
• Critical Temperature 25%
• Superconductor 24%
• Deposition Technique 23%
• Surface Roughness 21%
• Surface 20%
• Atomic Force Microscopy 17%
• Single Crystalline Solid 15%
• Transmission Electron Microscopy 14%
• Energy 10%
• Application 6%