TY - GEN
T1 - Surface compliant bonding properties of low-temperature wafer bonding using sub-micron Au particles
AU - Ishida, Hiroyuki
AU - Ogashiwa, Toshinori
AU - Kanehira, Yukio
AU - Murai, Hiroshi
AU - Yazaki, Takuya
AU - Ito, Shin
AU - Mizuno, Jun
PY - 2013/9/9
Y1 - 2013/9/9
N2 - Compression deformation property, which is directly related to an ability of surface compliant bonding and hermetic sealing, of low-temperature wafer bonding using sub-micron Au particles was studied. Wafer bonding test using 0.3 μm particles demonstrated excellent hermeticity with He leak rate better than 1 × 10-9 Pa·m3/s even on a substrate with a surface topography of a few μm. Cross-section SEM observation of the patterns with different particle sizes demonstrated that special voids are smaller in 0.1 μm particle patterns compared to that in 0.3 μm particle patterns. Deformation measurement revealed that 0.1μm particle patterns with initial height of 17 μm deformed by 9.4 μm after pressed at 100 MPa, which is fairly larger than that of 6.2 μm for 0.3 μm Au particles. This result can indicate that patterns with smaller size Au particles can be hermetically bonded at lower applied pressure.
AB - Compression deformation property, which is directly related to an ability of surface compliant bonding and hermetic sealing, of low-temperature wafer bonding using sub-micron Au particles was studied. Wafer bonding test using 0.3 μm particles demonstrated excellent hermeticity with He leak rate better than 1 × 10-9 Pa·m3/s even on a substrate with a surface topography of a few μm. Cross-section SEM observation of the patterns with different particle sizes demonstrated that special voids are smaller in 0.1 μm particle patterns compared to that in 0.3 μm particle patterns. Deformation measurement revealed that 0.1μm particle patterns with initial height of 17 μm deformed by 9.4 μm after pressed at 100 MPa, which is fairly larger than that of 6.2 μm for 0.3 μm Au particles. This result can indicate that patterns with smaller size Au particles can be hermetically bonded at lower applied pressure.
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U2 - 10.1109/ECTC.2013.6575773
DO - 10.1109/ECTC.2013.6575773
M3 - Conference contribution
AN - SCOPUS:84883356094
SN - 9781479902330
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1519
EP - 1523
BT - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
T2 - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Y2 - 28 May 2013 through 31 May 2013
ER -