Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water

Daisuke Niwa; Hiroshi Fukunaga; Takayuki Homma; Tetsuya Osaka

doi:10.1246/cl.2005.520

Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water

Daisuke Niwa, Hiroshi Fukunaga, Takayuki Homma, Tetsuya Osaka^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The heterojunction between Si(111) semiconductor and the well-ordered methyl monolayer was formed to investigate the channel conduction at the surface in the heterojunction structure. With the presence of water, the methyl monolayer/Si heterojunction structure showed switching action with a high trance-conductance of 2.8 × 10^-3 A/V under the application of bias voltage, while without the presence of water, such a switching behavior was not observed. The methyl monolayer/Si heterojunction structure worked as a p-type mode with the presence of water at the modified surface.

Original language	English
Pages (from-to)	520-521
Number of pages	2
Journal	Chemistry Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1246/cl.2005.520
Publication status	Published - 2005 Apr 5

ASJC Scopus subject areas

Chemistry(all)

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10.1246/cl.2005.520

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title = "Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water",

abstract = "The heterojunction between Si(111) semiconductor and the well-ordered methyl monolayer was formed to investigate the channel conduction at the surface in the heterojunction structure. With the presence of water, the methyl monolayer/Si heterojunction structure showed switching action with a high trance-conductance of 2.8 × 10-3 A/V under the application of bias voltage, while without the presence of water, such a switching behavior was not observed. The methyl monolayer/Si heterojunction structure worked as a p-type mode with the presence of water at the modified surface.",

author = "Daisuke Niwa and Hiroshi Fukunaga and Takayuki Homma and Tetsuya Osaka",

year = "2005",

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language = "English",

volume = "34",

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journal = "Chemistry Letters",

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T1 - Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water

AU - Niwa, Daisuke

AU - Fukunaga, Hiroshi

AU - Homma, Takayuki

AU - Osaka, Tetsuya

PY - 2005/4/5

Y1 - 2005/4/5

N2 - The heterojunction between Si(111) semiconductor and the well-ordered methyl monolayer was formed to investigate the channel conduction at the surface in the heterojunction structure. With the presence of water, the methyl monolayer/Si heterojunction structure showed switching action with a high trance-conductance of 2.8 × 10-3 A/V under the application of bias voltage, while without the presence of water, such a switching behavior was not observed. The methyl monolayer/Si heterojunction structure worked as a p-type mode with the presence of water at the modified surface.

AB - The heterojunction between Si(111) semiconductor and the well-ordered methyl monolayer was formed to investigate the channel conduction at the surface in the heterojunction structure. With the presence of water, the methyl monolayer/Si heterojunction structure showed switching action with a high trance-conductance of 2.8 × 10-3 A/V under the application of bias voltage, while without the presence of water, such a switching behavior was not observed. The methyl monolayer/Si heterojunction structure worked as a p-type mode with the presence of water at the modified surface.

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DO - 10.1246/cl.2005.520

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VL - 34

SP - 520

EP - 521

JO - Chemistry Letters

JF - Chemistry Letters

IS - 4

ER -

Surface conductivity in methyl-monolayer/Si heterojunction structure in the presence of water

Abstract

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