@inproceedings{c83384ab62e64d728a9d2b749f7ed3ac,
title = "Surface morphology and electronic properties of SnTe films prepared by molecular beam epitaxy",
abstract = "SnTe films are prepared on GaAs (100) substrates by molecular beam epitaxy, and the surface morphology and electronic property are characterized using scanning electron microscope (SEM) and Hall effect measurements, respectively. A distribution of dotted materials on the surface were observed by SEM, which was probably related to segregated Te. The inclusion of hexagonal Te in the film has results in poor electronic property of the film.",
keywords = "GaAs, Hall effect, MBE, SEM, SnTe, x-ray diffraction, XRF",
author = "Su Nan and K. Tsuboi and S. Kobayashi and K. Sugimoto and M. Kobayashi",
note = "Funding Information: Acknowledge This work was supported in part by the Waseda University Grant for Special Research Projects. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 Compound Semiconductor Week, CSW 2022 ; Conference date: 01-06-2022 Through 03-06-2022",
year = "2022",
doi = "10.1109/CSW55288.2022.9930124",
language = "English",
series = "2022 Compound Semiconductor Week, CSW 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 Compound Semiconductor Week, CSW 2022",
}