Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

Nan Su; Kaito Tsuboi; Shotaro Kobayashi; Kota Sugimoto; Masakazu Kobayashi

doi:10.1002/pssa.202200555

Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

Nan Su^*, Kaito Tsuboi, Shotaro Kobayashi, Kota Sugimoto, Masakazu Kobayashi^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

Original language	English
Article number	2200555
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	220
Issue number	8
DOIs	https://doi.org/10.1002/pssa.202200555
Publication status	Published - 2023 Apr

Keywords

Hall effect measurement
atomic force microscopy
electronic properties
molecular beam epitaxy
surface morphology
topological crystalline insulators

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

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10.1002/pssa.202200555

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title = "Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy",

abstract = "SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.",

keywords = "Hall effect measurement, atomic force microscopy, electronic properties, molecular beam epitaxy, surface morphology, topological crystalline insulators",

author = "Nan Su and Kaito Tsuboi and Shotaro Kobayashi and Kota Sugimoto and Masakazu Kobayashi",

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year = "2023",

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T1 - Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

AU - Su, Nan

AU - Tsuboi, Kaito

AU - Kobayashi, Shotaro

AU - Sugimoto, Kota

AU - Kobayashi, Masakazu

PY - 2023/4

Y1 - 2023/4

N2 - SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

AB - SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

KW - Hall effect measurement

KW - atomic force microscopy

KW - electronic properties

KW - molecular beam epitaxy

KW - surface morphology

KW - topological crystalline insulators

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Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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