Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

H. Kawarada; C. Wild; N. Herres; P. Koidl; Y. Mizuochi; A. Hokazono; H. Nagasawa

doi:10.1063/1.121213

Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

H. Kawarada^*, C. Wild, N. Herres, P. Koidl, Y. Mizuochi, A. Hokazono, H. Nagasawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.

Original language	English
Pages (from-to)	1878-1880
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	15
DOIs	https://doi.org/10.1063/1.121213
Publication status	Published - 1998 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [{\=1}10] axis. Homogeneous macro steps with (001) terraces are observed in the [{\=1}10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.",

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AU - Kawarada, H.

AU - Wild, C.

AU - Herres, N.

AU - Koidl, P.

AU - Mizuochi, Y.

AU - Hokazono, A.

AU - Nagasawa, H.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.

AB - The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4° off β-SiC(001) tilted around the [1̄10] axis. Homogeneous macro steps with (001) terraces are observed in the [1̄10] direction forming a vicinal angle of 3°-4° from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal. The tilt deviation is less than 1° in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films.

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Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

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