Abstract
The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 53-58 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 446 |
| Publication status | Published - 1997 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 5 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering