Abstract
ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the crystallinity and morphology of the produced ZnTe film. The growth mode of the ZnTe thin film on a sapphire substrate with an atomically-smooth step-terrace structure was found to shift to a two-dimensional growth mode, and a ZnTe thin film possessing a flat surface was obtained. The crystallographic properties of the ZnTe film suggested that the resulting layer consisted of a single (111)-oriented domain. The photoluminescence property was also improved, and the interface lattice alignment between the ZnTe and sapphire was also affected by the atomically-smooth step-terrace structure.
Original language | English |
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Pages (from-to) | 2127-2132 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 45 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2016 Apr 1 |
Keywords
- Sapphire
- molecular beam epitaxy
- step-terrace structure
- x-ray diffraction
- zinc telluride
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry