Abstract
Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical cone, of 643% exhibited a resistive switching behavior (ON-OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I-V characteristics.
Original language | English |
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Pages (from-to) | 1160-1161 |
Number of pages | 2 |
Journal | Chemistry Letters |
Volume | 38 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2009 |
ASJC Scopus subject areas
- Chemistry(all)