Synthesis of SiC coating from SiO by a chemical vapor deposition (CVD) process

A new chemical vapor deposition process for coating SiC is proposed in which gaseous SiO and toluene vapor are reacted to generate SiC in the presence of iron oxide as a catalytic component. At a temperature of 1450°C, SiC can be formed substantially from gaseous SiO and toluene vapor only at positions of iron oxide deposition. When iron oxide is deposited as a coating on a substrate, SiC can also be formed as a coating on the substrate by calcinating at 1450°C while supplying gaseous SiO and toluene vapor. In this process, SiC coating of several tens μm in thickness is formed on the substrate, and fibrous material is also formed on the SiC coating. The fibrous material is composed of fibrous SiC as well as an Fe-containing spherical substance and can be easily removed mechanically from the SiC coating. This process for coating SiC is based on a vapor-liquid-solid mechanism.