This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.
|Title of host publication
|ICMTS 2015 - Proceedings of the 2015 IEEE International Conference on Microelectronic Test Structures
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - 2015 May 12
|2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015 - Tempe, United States
Duration: 2015 Mar 23 → 2015 Mar 26
|IEEE International Conference on Microelectronic Test Structures
|2015 IEEE International Conference on Microelectronic Test Structures, ICMTS 2015
|15/3/23 → 15/3/26
ASJC Scopus subject areas
- Electrical and Electronic Engineering