TEM study of the interface of anodic-bonded Si/glass

Q. F. Xing; M. Yoshida; G. Sasaki

doi:10.1016/S1359-6462(02)00170-7

TEM study of the interface of anodic-bonded Si/glass

Q. F. Xing^*, M. Yoshida, G. Sasaki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

Original language	English
Pages (from-to)	577-582
Number of pages	6
Journal	Scripta Materialia
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/S1359-6462(02)00170-7
Publication status	Published - 2002 Nov 1
Externally published	Yes

Keywords

Anodic bonding
Glass
Silicon
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/S1359-6462(02)00170-7

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title = "TEM study of the interface of anodic-bonded Si/glass",

abstract = "Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.",

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T1 - TEM study of the interface of anodic-bonded Si/glass

AU - Xing, Q. F.

AU - Yoshida, M.

AU - Sasaki, G.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

AB - Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

KW - Anodic bonding

KW - Glass

KW - Silicon

KW - Transmission electron microscopy (TEM)

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U2 - 10.1016/S1359-6462(02)00170-7

DO - 10.1016/S1359-6462(02)00170-7

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JO - Scripta Materialia

JF - Scripta Materialia

IS - 9

ER -

TEM study of the interface of anodic-bonded Si/glass

Abstract

Keywords

ASJC Scopus subject areas

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