TEM study of the interface of anodic-bonded Si/glass

Q. F. Xing*, M. Yoshida, G. Sasaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

Original languageEnglish
Pages (from-to)577-582
Number of pages6
JournalScripta Materialia
Issue number9
Publication statusPublished - 2002 Nov 1
Externally publishedYes


  • Anodic bonding
  • Glass
  • Silicon
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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