TY - JOUR
T1 - Temperature and incident beam-current dependence of dominant free-exciton recombination radiation from high-purity chemical vapor deposition (CVD) diamonds
AU - Yamaguchi, Akira
AU - Yamashita, Satoshi
AU - Tsutsumi, Takahiro
AU - Kawarada, Hiroshi
PY - 1994/8
Y1 - 1994/8
N2 - Dominant free-exciton (FE) recombination radiation has been obtained from high-purity Chemical vapor deposition (CVD) diamond synthesized on Cu substrates by means of microwave plasma CVD using CH4 + O2 diluted with H2. The intensity of FE emission is almost constant between 80 K and 170 K, and is reduced by two orders of magnitude at room temperature. The emission increases in proportion to the incident beam current from 1 × 10–9 A to 2 × 10–6 A. The spectrum shapes between 200 nm and 600 nm do not depend on the beam current. In addition, the isotopic effect on the FE emission peak shift has been observed in the spectrum from13C-enriched (96.6%) CVD diamond for the first time.
AB - Dominant free-exciton (FE) recombination radiation has been obtained from high-purity Chemical vapor deposition (CVD) diamond synthesized on Cu substrates by means of microwave plasma CVD using CH4 + O2 diluted with H2. The intensity of FE emission is almost constant between 80 K and 170 K, and is reduced by two orders of magnitude at room temperature. The emission increases in proportion to the incident beam current from 1 × 10–9 A to 2 × 10–6 A. The spectrum shapes between 200 nm and 600 nm do not depend on the beam current. In addition, the isotopic effect on the FE emission peak shift has been observed in the spectrum from13C-enriched (96.6%) CVD diamond for the first time.
KW - C-enriched CVD diamond
KW - Free-exciton recombination radiation
KW - UV-light-emitting
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U2 - 10.1143/JJAP.33.L1063
DO - 10.1143/JJAP.33.L1063
M3 - Article
AN - SCOPUS:0028482685
SN - 0021-4922
VL - 33
SP - L1063-L1065
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8
ER -