@inproceedings{de21a30b204e437d98648939c4653f97,
title = "Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate",
abstract = "We have developed energy-efficient 1.3-μm membrane lasers on Si for datacom applications. We employ InGaAlAs-based MQWs as an active material to improve the temperature characteristics and modulation speed. We achieved lasing at up to 95°C and direct modulation up to 40-Gbit/s at 25°C.",
keywords = "direct bonding, distributed-reflector laser, epitaxial growth, silicon photonics",
author = "Takuro Fujii and Hidetaka Nishi and Koji Takeda and Erina Kanno and Koichi Hasebe and Tomonari Sato and Takaaki Kakitsuka and Hiroshi Fukuda and Tai Tsuchizawa and Shinji Matsuo",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",
year = "2018",
month = oct,
day = "30",
doi = "10.1109/ISLC.2018.8516179",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "87--88",
booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",
}