TY - GEN
T1 - Temperature Characteristics of Intermixed Ridge Type Quantum Dot Lasers
AU - Matsumoto, A.
AU - Kaneko, R.
AU - Akahane, K.
AU - Katsuhara, R.
AU - Yabuki, R.
AU - Umezawa, T.
AU - Nakajima, S.
AU - Kanno, A.
AU - Matsushima, Y.
AU - Utaka, K.
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI (JP19K15056), the New Energy and Industrial Technology Development Organization (NEDO) (JPNP20017), and JST CREST (JPMJCR17N2), Japan.
Publisher Copyright:
© Optica Publishing Group 2022, © 2022 The Author(s)
PY - 2022
Y1 - 2022
N2 - In this study, ridge type quantum dot (QD) laser diodes were fabricated with ion implantation induced disordering QD Intermixing technique using B and Ar ions. QD-LDs demonstrated low threshold current and very good temperature characteristics.
AB - In this study, ridge type quantum dot (QD) laser diodes were fabricated with ion implantation induced disordering QD Intermixing technique using B and Ar ions. QD-LDs demonstrated low threshold current and very good temperature characteristics.
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M3 - Conference contribution
AN - SCOPUS:85139924258
T3 - 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings
BT - 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 Conference on Lasers and Electro-Optics, CLEO 2022
Y2 - 15 May 2022 through 20 May 2022
ER -