TY - JOUR
T1 - Temperature Characteristics of ScAlN/SiO2 BAW Resonators
AU - Igeta, Honoka
AU - Totsuka, Makoto
AU - Suzuki, Masashi
AU - Yanagitani, Takahiko
N1 - Funding Information:
This work was supported by the Japan Science and Technology Agency, PRESTO (JST PRESTO, N0.JPMJPRI6R8) and KAKENHI (Grant-in-Aid for Scientific Research (B), No. 16H04356)
Publisher Copyright:
© 2018 IEEE.
PY - 2018
Y1 - 2018
N2 - The electromechanical coupling coefficient kt2, TCF and Qm factor of the stack structure of ScAlN/SiCh or ScAlN/diamond BAW film resonators were simulated to compare with conventional single layer A1N films, kt2 of A1N films is not enough for BAW RF filter applications. ScAIN films have kt2 exceeding A1N films, but Qm factor deteriorate with Sc doping. We experimentally investigated TCF of ScxAli-xN films with various Sc concentration. By using the experiment TCF, Simulated results shows that ScAlN/SiCh BAW film resonators obtain higher kt2 than one of A1N with good TCF. The Qm factor and TCF of ScAlN/diamond BAW film resonators were improved, whereas the kt2 was seriously decreased compared with single layer A1N. Therefore, the ScAlN/SiCh BAW film resonators may be promising combination for BAW RF filter applications.
AB - The electromechanical coupling coefficient kt2, TCF and Qm factor of the stack structure of ScAlN/SiCh or ScAlN/diamond BAW film resonators were simulated to compare with conventional single layer A1N films, kt2 of A1N films is not enough for BAW RF filter applications. ScAIN films have kt2 exceeding A1N films, but Qm factor deteriorate with Sc doping. We experimentally investigated TCF of ScxAli-xN films with various Sc concentration. By using the experiment TCF, Simulated results shows that ScAlN/SiCh BAW film resonators obtain higher kt2 than one of A1N with good TCF. The Qm factor and TCF of ScAlN/diamond BAW film resonators were improved, whereas the kt2 was seriously decreased compared with single layer A1N. Therefore, the ScAlN/SiCh BAW film resonators may be promising combination for BAW RF filter applications.
KW - BAW resonators
KW - ScAlN
KW - SiO2
KW - TCF
KW - electromechanical coupling coefficient
KW - the stack structure
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U2 - 10.1109/ULTSYM.2018.8580165
DO - 10.1109/ULTSYM.2018.8580165
M3 - Conference article
AN - SCOPUS:85062635149
SN - 1948-5719
VL - 2018-January
JO - IEEE International Ultrasonics Symposium, IUS
JF - IEEE International Ultrasonics Symposium, IUS
M1 - 8580165
T2 - 2018 IEEE International Ultrasonics Symposium, IUS 2018
Y2 - 22 October 2018 through 25 October 2018
ER -