Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

H. Tanaka; M. Horita; Yuichi Matsushima; Y. Takahashi

Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

H. Tanaka^*, M. Horita, Yuichi Matsushima, Y. Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔE_g at 20°C has been estimated to be 48-55 meV. At ΔE_g of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔE_g. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

Original language	English
Pages (from-to)	605-612
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	28
Issue number	5
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Cite this

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title = "Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module",

abstract = "We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.",

author = "H. Tanaka and M. Horita and Yuichi Matsushima and Y. Takahashi",

year = "1996",

language = "English",

volume = "28",

pages = "605--612",

journal = "Optical and Quantum Electronics",

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TY - JOUR

T1 - Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

AU - Tanaka, H.

AU - Horita, M.

AU - Matsushima, Yuichi

AU - Takahashi, Y.

PY - 1996

Y1 - 1996

N2 - We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

AB - We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

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M3 - Article

AN - SCOPUS:0030149625

SN - 0306-8919

VL - 28

SP - 605

EP - 612

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 5

ER -

Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

Abstract

ASJC Scopus subject areas

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