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Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon
K. Takeda
*
, K. Sakui, M. Sakata
*
Corresponding author for this work
Research output
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Article
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peer-review
3
Citations (Scopus)
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Chemical Compounds
Hall Effect Coefficient
100%
Subband
86%
Compound Mobility
45%
Optical Phonon
31%
Purity
30%
Hole Mobility
23%
Valence Band
22%
Surface
6%
Engineering & Materials Science
Phonon scattering
54%
Valence bands
53%
Hole mobility
49%
Silicon
47%
Temperature
23%
Physics & Astronomy
Hall effect
54%
temperature dependence
38%
silicon
32%
hole mobility
13%
interactions
9%
valence
8%
phonons
8%
scattering
6%