Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama; Atsushi Tackeuchi; Tsuguo Inata; Sunichi Muto

Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama^*, Atsushi Tackeuchi, Tsuguo Inata, Sunichi Muto

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an Al_xGa_1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps the temperature increases from 6K to 132K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

Original language	English
Title of host publication	Institute of Physics Conference Series
Publisher	Publ by IOP Publishing Ltd
Pages	235-238
Number of pages	4
ISBN (Print)	0854984100
Publication status	Published - 1991 Dec 1
Externally published	Yes
Event	Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA Duration: 1991 Sept 9 → 1991 Sept 12

Publication series

Name	Institute of Physics Conference Series
Volume	120
ISSN (Print)	0951-3248

Other

Other	Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
City	Seattle, WA, USA
Period	91/9/9 → 91/9/12

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures. / Sugiyama, Yoshihiro; Tackeuchi, Atsushi; Inata, Tsuguo et al.
Institute of Physics Conference Series. Publ by IOP Publishing Ltd, 1991. p. 235-238 (Institute of Physics Conference Series; Vol. 120).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugiyama, Y, Tackeuchi, A, Inata, T & Muto, S 1991, Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures. in Institute of Physics Conference Series. Institute of Physics Conference Series, vol. 120, Publ by IOP Publishing Ltd, pp. 235-238, Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, WA, USA, 91/9/9.

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PY - 1991/12/1

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N2 - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps the temperature increases from 6K to 132K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

AB - We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-xAs (x=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps the temperature increases from 6K to 132K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

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T2 - Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds

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Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

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