Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

R. J. Thomas*, Benjamin Rockwell, H. R. Chandrasekhar, Meera Chandrasekhar, A. K. Ramdas, M. Kobayashi, R. L. Gunshor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

Original languageEnglish
Pages (from-to)6569-6573
Number of pages5
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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