TY - JOUR
T1 - Ten-Second Epitaxy of Cu on Repeatedly Used Sapphire for Practical Production of High-Quality Graphene
AU - Nagai, Yukuya
AU - Okawa, Asahi
AU - Minamide, Taisuke
AU - Hasegawa, Kei
AU - Sugime, Hisashi
AU - Noda, Suguru
N1 - Funding Information:
The authors thank Takahiro Goto at Materials Characterization Central Laboratory, Waseda University, for XRD and μ-XPS analyses. This work is financially supported by JSPS KAKENHI Grant Number JP25107002, Japan.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/7/31
Y1 - 2017/7/31
N2 - Epitaxial copper (Cu) films yield graphene with superior quality but at high cost. We report 1-3 μm thick epitaxial Cu films prepared on c plane sapphire substrates in 10-30 s, which is much faster than that of the typical sputtering method. Such rapid deposition is realized by vapor deposition using a Cu source heated to 1700-1800 °C, which is much higher than its melting point of 1085 °C. Continuous graphene films, either bilayer or single-layer, are obtained on the epitaxial Cu by chemical vapor deposition and transferred to carrier substrates. The sapphire substrates can be reused five to six times maintaining the quality of the epitaxial Cu films and graphene. The mechanisms and requirements are discussed for such quick epitaxy of Cu on reused sapphire, which will enable high-quality graphene production at lower cost.
AB - Epitaxial copper (Cu) films yield graphene with superior quality but at high cost. We report 1-3 μm thick epitaxial Cu films prepared on c plane sapphire substrates in 10-30 s, which is much faster than that of the typical sputtering method. Such rapid deposition is realized by vapor deposition using a Cu source heated to 1700-1800 °C, which is much higher than its melting point of 1085 °C. Continuous graphene films, either bilayer or single-layer, are obtained on the epitaxial Cu by chemical vapor deposition and transferred to carrier substrates. The sapphire substrates can be reused five to six times maintaining the quality of the epitaxial Cu films and graphene. The mechanisms and requirements are discussed for such quick epitaxy of Cu on reused sapphire, which will enable high-quality graphene production at lower cost.
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U2 - 10.1021/acsomega.7b00509
DO - 10.1021/acsomega.7b00509
M3 - Article
AN - SCOPUS:85028924559
SN - 2470-1343
VL - 2
SP - 3354
EP - 3362
JO - ACS Omega
JF - ACS Omega
IS - 7
ER -