TY - GEN
T1 - Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate
AU - Tomita, M.
AU - Kosemura, D.
AU - Usuda, K.
AU - Ogura, A.
PY - 2013
Y1 - 2013
N2 - A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.
AB - A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.
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U2 - 10.1149/05301.0207ecst
DO - 10.1149/05301.0207ecst
M3 - Conference contribution
AN - SCOPUS:84885650224
SN - 9781607683742
T3 - ECS Transactions
SP - 207
EP - 214
BT - Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
T2 - 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
Y2 - 12 May 2013 through 17 May 2013
ER -