The characterization of SiC hot-implanted with Ga⁺

In this study, we investigated the effect of the hot and multiple energy implantation technique for Ga⁺ ions in 3C-, 6H- and 4H-SiC substrates by Rutherford backscattering spectrometry and channeling technique (RBS-C). We found that the layers implanted at 500°C exhibit a good crystalline quality in spite of the presence of some residual defects originating from the implantation-induced damages and a large percentage of Ga atoms were observed to occupy the substitutional lattice sites independent of the polytype. This tendency becomes more pronounced by using the multiple energy implantation technique.