The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1109/ISLC.2012.6348369

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

Original language	English
Article number	6348369
Pages (from-to)	82-83
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC.2012.6348369
Publication status	Published - 2012 Dec 11
Externally published	Yes
Event	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States Duration: 2012 Oct 7 → 2012 Oct 10

Keywords

highly stacking
quantum dot
semiconductor laser
strain-compensation

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2012.6348369

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The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.
In: Conference Digest - IEEE International Semiconductor Laser Conference, 11.12.2012, p. 82-83.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.",

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AB - We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

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The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Abstract

Keywords

ASJC Scopus subject areas

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