The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors

Yoshihiko Kurui, Hideyuki Tomizawa, Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Tamio Ikehashi, Yoshiaki Sugizaki, Hideki Shibata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


To compare Si and poly-SiGe as MEMS structural materials having 20 pm-thick, we fabricated a capacitive accelerometer on an 8-inch Si substrate using CMOS standard process and measured capacitance sensitivities of an identical sensor design. As a result, we found that the sensitivity of the SiGe sensor is 2.1 times larger than that of the Si sensor. We also confirmed that the SiGe sensor can attain lower noise level as well as lower power consumption, thanks to the higher mass density of SiGe and availability of CMOS-embedded SiGe MEMS structure. The results indicate that the poly-SiGe film is promising candidates for future CMOS-embedded sensor technology applications.

Original languageEnglish
Title of host publicationIEEE SENSORS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9781509010127
Publication statusPublished - 2017 Dec 21
Externally publishedYes
Event16th IEEE SENSORS Conference, ICSENS 2017 - Glasgow, United Kingdom
Duration: 2017 Oct 302017 Nov 1

Publication series

NameProceedings of IEEE Sensors
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229


Other16th IEEE SENSORS Conference, ICSENS 2017
Country/TerritoryUnited Kingdom


  • Accelerometer
  • CMOS-embedded MEMS
  • Inertial MEMS
  • IoT
  • Power Consumption
  • Sensitivity
  • SiGe MEMS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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