The influence of low-temperature annealing on the physical properties of bi2sr2cacu2cl y thin films

Y. Shinma; Takayuki Sota; K. Suzuki

doi:10.1080/01411599308203497

The influence of low-temperature annealing on the physical properties of bi₂sr₂cacu₂cl y thin films

Y. Shinma, Takayuki Sota, K. Suzuki

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the low-temperature annealing effect on the physical properties of Bi₂Sr₂CaCu₂O_v thin films deposited on a MgO(lOO) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. T_cand p at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.

Original language	English
Pages (from-to)	79-83
Number of pages	5
Journal	Phase Transitions
Volume	42
Issue number	1-2
DOIs	https://doi.org/10.1080/01411599308203497
Publication status	Published - 1993 Jan 1

Keywords

low-temperature annealing
oxygen partial pressure during annealing
The 2212 phase of Bi-based superconductor
the BiO planes
the ligand of Bi atom
XPS

ASJC Scopus subject areas

Materials Science(all)
Instrumentation

Access to Document

10.1080/01411599308203497

Cite this

@article{16c4687cd66c404495875fd92bdadca8,

title = "The influence of low-temperature annealing on the physical properties of bi2sr2cacu2cl y thin films",

abstract = "We have studied the low-temperature annealing effect on the physical properties of Bi2Sr2CaCu2Ov thin films deposited on a MgO(lOO) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. Tcand p at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.",

keywords = "low-temperature annealing, oxygen partial pressure during annealing, The 2212 phase of Bi-based superconductor, the BiO planes, the ligand of Bi atom, XPS",

author = "Y. Shinma and Takayuki Sota and K. Suzuki",

year = "1993",

month = jan,

day = "1",

doi = "10.1080/01411599308203497",

language = "English",

volume = "42",

pages = "79--83",

journal = "Phase Transitions",

issn = "0141-1594",

publisher = "Taylor and Francis Ltd.",

number = "1-2",

}

TY - JOUR

T1 - The influence of low-temperature annealing on the physical properties of bi2sr2cacu2cl y thin films

AU - Shinma, Y.

AU - Sota, Takayuki

AU - Suzuki, K.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - We have studied the low-temperature annealing effect on the physical properties of Bi2Sr2CaCu2Ov thin films deposited on a MgO(lOO) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. Tcand p at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.

AB - We have studied the low-temperature annealing effect on the physical properties of Bi2Sr2CaCu2Ov thin films deposited on a MgO(lOO) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. Tcand p at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.

KW - low-temperature annealing

KW - oxygen partial pressure during annealing

KW - The 2212 phase of Bi-based superconductor

KW - the BiO planes

KW - the ligand of Bi atom

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=84963163653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963163653&partnerID=8YFLogxK

U2 - 10.1080/01411599308203497

DO - 10.1080/01411599308203497

M3 - Article

AN - SCOPUS:84963163653

SN - 0141-1594

VL - 42

SP - 79

EP - 83

JO - Phase Transitions

JF - Phase Transitions

IS - 1-2

ER -