TY - JOUR
T1 - The possibility of mW/cm2-class on-chip power generation using ultrasmall si nanowire-based thermoelectric generators
AU - Zhang, Hui
AU - Xu, Taiyu
AU - Hashimoto, Shuichiro
AU - Watanabe, Takanobu
N1 - Funding Information:
Manuscript received January 29, 2018; revised February 21, 2018; accepted March 18, 2018. Date of publication April 9, 2018; date of current version April 20, 2018. This work was supported by the CREST Project of Japan Science and Technology Corporation under Grant JPMJCR15Q7. The review of this paper was arranged by Editor R. Venkatasubramanian. (Corresponding author: Hui Zhang.) H. Zhang is with the Graduate School of Science and Technology, Gunma University, Kiryu 376-8515, Japan (e-mail: huizhang@gunma-u.ac.jp).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2018/5
Y1 - 2018/5
N2 - A simple structure of planar silicon nanowire (SiNW)-based thermoelectric (TE) generators (TEGs) is presented in this paper, which has the ability to sustain temperature difference along SiNW under ultrashort channel length for achieving mW/cm2-class power output from environmental heat energy. The TE performance of the proposed SiNW-based TEGs was evaluated by finite-element simulation and analytic modeling. The channel length, pad length, and the thickness of the SiO2 layer were varied in the model while keeping a series of constant proportions toward finding the optimal SiNW-based TEG structure for high power generation. Based on the analysis, we demonstrated that decreasing the dimension of SiNW-based TEG is beneficial to improving the total TE power density. A very high power density of 4.2 mW/cm2 is possible to be achieved at SiNW length of μm and pad length of μm under a temperature difference of 5 K across the hot and cold regions. The miniaturized SiNW-based TEG has a great potential to obtain the output power density which is 100-1000 times higher than conventional planar TEGs with air cavity but has a simple structure and can easily be fabricated.
AB - A simple structure of planar silicon nanowire (SiNW)-based thermoelectric (TE) generators (TEGs) is presented in this paper, which has the ability to sustain temperature difference along SiNW under ultrashort channel length for achieving mW/cm2-class power output from environmental heat energy. The TE performance of the proposed SiNW-based TEGs was evaluated by finite-element simulation and analytic modeling. The channel length, pad length, and the thickness of the SiO2 layer were varied in the model while keeping a series of constant proportions toward finding the optimal SiNW-based TEG structure for high power generation. Based on the analysis, we demonstrated that decreasing the dimension of SiNW-based TEG is beneficial to improving the total TE power density. A very high power density of 4.2 mW/cm2 is possible to be achieved at SiNW length of μm and pad length of μm under a temperature difference of 5 K across the hot and cold regions. The miniaturized SiNW-based TEG has a great potential to obtain the output power density which is 100-1000 times higher than conventional planar TEGs with air cavity but has a simple structure and can easily be fabricated.
KW - Channel length
KW - On-chip energy harvesting
KW - Si nanowire (SiNW) thermoelectric (TE) generator (TEG)
KW - TE power
KW - Thermal distribution
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U2 - 10.1109/TED.2018.2817641
DO - 10.1109/TED.2018.2817641
M3 - Article
AN - SCOPUS:85045187876
SN - 0018-9383
VL - 65
SP - 2016
EP - 2023
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 5
ER -