TY - JOUR
T1 - The role of stacked insulating layers on thin-film electroluminescent devices
AU - Ohwaki, Junichi
AU - Yamauchi, Noriyoshi
AU - Kozawaguchi, Haruki
AU - Tsujiyama, Bunjiro
PY - 1987/7
Y1 - 1987/7
N2 - The charge versus applied voltage (Q-V) characteristics of a thin-film electroluminescent (TFEL) device with an Al/SiO2/Ta2O5/ZnS/Ta2O5/ITO/Glass structure are investigated. The results for a stacked insulating layer TFEL device are summarized as follows. The maximum charge (Qmax) of the TFEL device is determined by the highest Qmax of insulators. The SiO2 insulating layer used in this study shows that the dielectric avalanche breakdown and the electric field of the film is clamped in the region above its own breakdown field strength under current conditions limited by the Ta2O5 insulating layers. The TFEL device shows a hexagonal Q-V loop in high electric fields.
AB - The charge versus applied voltage (Q-V) characteristics of a thin-film electroluminescent (TFEL) device with an Al/SiO2/Ta2O5/ZnS/Ta2O5/ITO/Glass structure are investigated. The results for a stacked insulating layer TFEL device are summarized as follows. The maximum charge (Qmax) of the TFEL device is determined by the highest Qmax of insulators. The SiO2 insulating layer used in this study shows that the dielectric avalanche breakdown and the electric field of the film is clamped in the region above its own breakdown field strength under current conditions limited by the Ta2O5 insulating layers. The TFEL device shows a hexagonal Q-V loop in high electric fields.
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U2 - 10.1143/JJAP.26.1064
DO - 10.1143/JJAP.26.1064
M3 - Article
AN - SCOPUS:0023383335
SN - 0021-4922
VL - 26
SP - 1064
EP - 1068
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7R
ER -